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| smd type sot-523 unit: mm 0.2 +0.05 -0.05 1.0 +0.1 -0.1 1.6 +0.1 -0.1 1.6 +0.15 -0.15 0.3 +0.25 -0.05 0.5 +0.1 -0.1 0.75 +0.05 -0.05 0.8 +0.05 -0.05 0.1 +0.01 -0.01 0.8 +0.1 -0.1 0.35 0.55 1 2 3 1. base 2. emitter 3. collecter KC847T (bc847t) absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5v collector current (dc) i c 100 ma peak collector current i cm 200 ma power dissipation p d 150 mw junction temperature t j 150 storage temperature t stg -65to+150 marking no. kc847at kc847bt kc847ct marking 1e 1f 1g features low current (max. 100 ma) low voltage (max. 45 v). electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb = 30 v 15 na i e =0;v cb =30v;t j = 150 5 a emitter cut-off current i ebo i c =0;v eb = 5 v 100 na kc847at 110 220 kc847bt 200 450 kc847ct 420 800 i c =10ma;i b = 0.5 ma 200 mv i c = 100 ma; i b = 5 ma; * 400 mv i c =2ma;v ce = 5 v 580 700 mv i c =10ma;v ce = 5 v 770 mv collector capacitance c c i e =i e =0;v cb =10v;f=1mhz 1.5 pf emitter capacitance c e i c =i c =0;v eb = 500 mv; f = 1 mhz 11 pf noise figure f i c = 200 a; v ce =5v;r s =2k ;f = 1 khz; b = 200 hz 10 db transition frequency f t i c =10ma;v ce = 5 v; f = 100 mhz 100 mhz * pulse test: tp 300 ms; 0.02. v cesat collector-emitter saturation voltage v be base-emitter voltage i c =2ma;v ce =5v i cbo collector cut-off current h fe dc current gain product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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